Ion implantation of rare-earth dopants in ferromagnetic thin films
Ion implantation of rare-earth dopants in ferromagnetic thin films
复制标题
铁磁薄膜中稀土掺杂剂的离子注入
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
H. Bakhru
中科院分区：
文献类型：
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作者：
V. Dasgupta;N. Litombe;W. Bailey;H. Bakhru
We show that high-dose ion implantation can be used to introduce rare-earth dopants for the control of precessional dynamics in magnetic thin films. Tb and Gd ions have been implanted in Ni81Fe19 through Ta masks at dosages from 1×1014∕cm2 to 1×1015∕cm2. Effects on dynamics are found to be similar to those contributed by cosputtered Tb and Gd dopants in Ni81Fe19 (50nm). Broadband ferromagnetic resonance measurements from 0to18GHz show that adjustments in damping α from 0.008 to 0.040 are fully intrinsic (Gilbert type) and roughly proportional to dose. The technique enables the creation of films with spatially modulated precessional characteristics.
