Performance analysis of copper-indium-gallium-diselenide (CIGS) solar cells with various buffer layers by SCAPS
Performance analysis of copper-indium-gallium-diselenide (CIGS) solar cells with various buffer layers by SCAPS
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DOI：
10.1016/j.cap.2010.02.018
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发表时间：
2010-05-01
影响因子：
2.4
通讯作者：
Amin, Nowshad
中科院分区：
文献类型：
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作者：
Chelvanathan, Puvaneswaran;Hossain, Mohammad Istiaque;Amin, Nowshad
在铜铟镓二硒（CIGS）基太阳电池中，用电容模拟器（SCAPS）研究了ZnO、ZnS（O，OH）、ZnSe、InS和Zn_（1-x）Mg_xO基缓冲层替代硫化镉（CdS）缓冲层的厚度、吸收层带隙和工作温度对缓冲层性能的影响。以CdS缓冲层为参考层，在Voc为0.78V，Jsc为33.5mA/cm（2），填充因子为0.82的条件下，获得了21.32%的效率。高效率CIGS电池的吸收体厚度在2 ~ 3 μ m之间。缓冲层的最佳厚度为40-50 nm。从不同缓冲层的研究中，ZnO缓冲层的电池效率最高，为21.16%。然而，基于ZnO缓冲层的电池显示出类似于0.32%/K的温度梯度，而基于ZnS和ZnSe缓冲层的电池显示出类似于0.27%/K的温度梯度，证明其在更高的操作温度下更稳定。这些模拟结果为提高CIGS太阳电池的效率提供了重要的指导。(C)2010年爱思唯尔B。V.保留所有权利。
In copper-indium-gallium-diselenide (CIGS) based solar cells, various replacements for conventional cadmium sulfide (CdS) buffer layer, such as ZnO, ZnS (O, OH), ZnSe, InS and Zn1 xMgxO based buffer layers have been studied by solar cell capacitance simulator (SCAPS) in terms of layer thickness, absorber layer band gap and operating temperature to find out the optimum choice. An efficiency of 21.32% (with Voc of 0.78 V, Jsc of 33.5 mA/cm(2) and fill factor of 0.82) has been achieved with CdS based buffer layer as the reference case. It is also found that the high efficiency CIGS cells have the absorber thickness between 2 lm and 3 lm. It is also revealed that the optimum thickness of buffer layer is within the range of 40-50 nm. From the study with different kinds of buffer layers, cells with ZnO buffer layer produce the best efficiency of 21.16% among others. However, the ZnO buffer layer based cells show a temperature gradient of similar to 0.32%/K, whereas ZnS and ZnSe buffer layer based cells show similar to 0.27%/K proving it much stable in higher operating temperature. All these simulation results give some important indication to lead to higher efficiency of CIGS solar cells for feasible fabrication. (C) 2010 Elsevier B. V. All rights reserved.