Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β‐LiGaO2 substrates
Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β‐LiGaO2 substrates
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DOI：
10.1063/1.116898
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发表时间：
1996-09
影响因子：
4
通讯作者：
P. Kung;A. Saxler;X. Zhang;D. Walker;R. Lavado;M. Razeghi
中科院分区：
文献类型：
--
作者：
P. Kung;A. Saxler;X. Zhang;D. Walker;R. Lavado;M. Razeghi
We report the metalorganic chemical vapor deposition growth and characterization of monocrystalline GaN thin films on β‐LiGaO2 substrates. The influence of the growth temperature on the crystal quality was studied. The structural, electrical, and optical properties of the films were assessed through scanning electron microscopy, x‐ray diffraction, Hall measurements, optical transmission, photoluminescence.
