Electrical and magnetic properties of tantalum silicon telluride and isostructural compounds
Electrical and magnetic properties of tantalum silicon telluride and isostructural compounds
复制标题
碲化钽硅及同构化合物的电学和磁学性质
DOI：
10.1016/0025-5408(94)90030-2
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发表时间：
1994
影响因子：
5.4
通讯作者：
F. Disalvo
中科院分区：
文献类型：
--
作者：
M. Badding;R. Gitzendanner;R. Ziebarth;F. Disalvo
本文报道了一类低维化合物M4ZTe4（M=Ta， Z=Si, Cr, Fe, Co，和Ni； M=Nb， Z=Si, Fe）的电阻率，磁化率和晶格参数测量。具有Z=Si的化合物具有抗磁性，其电阻率曲线显示两个相变，可能是由于这些伪一维体系中的电荷密度波。对于Z=Cr, Fe， Co和Ni，化合物是具有典型金属间相特征的顺磁性金属。
Electrical resistivity, magnetic susceptibility, and lattice parameter measurements for the family of low-dimensional compounds, M4ZTe4(M=Ta, Z=Si, Cr, Fe, Co, and Ni; M=Nb, Z=Si, Fe) are reported. The compounds with Z=Si are diamagnetic and the resistivity curves suggest two phase transitions, possibly due to charge density waves in these pseudo one-dimensional systems. For Z=Cr, Fe, Co, and Ni the compounds are paramagnetic metals with characteristics of typical intermetallic phases.