Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates
Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates
复制标题
通过湿法蚀刻技术在硅上悬浮单晶氧化物结构：氧空位和位错对蚀刻速率的影响
DOI：
10.1116/1.5135035
复制
发表时间：
2020
影响因子：
2.9
通讯作者：
Ngai, Joseph H.
中科院分区：
文献类型：
--
作者：
Lim, Zheng Hui;Chrysler, Matthew;Kumar, Abinash;Mauthe, Jacob P.;Kumah, Divine P.;Richardson, Chris;LeBeau, James M.;Ngai, Joseph H.
