Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays
Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays
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DOI：
10.1109/led.2010.2090127
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发表时间：
2011-02
影响因子：
4.9
通讯作者：
R. Rosezin;E. Linn;L. Nielen;C. Kügeler;R. Bruchhaus;R. Waser
中科院分区：
文献类型：
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作者：
R. Rosezin;E. Linn;L. Nielen;C. Kügeler;R. Bruchhaus;R. Waser
最近，由两个双极反串联连接的忆阻元件组成的互补电阻开关（CRS）的发明已经克服了无源交叉开关阵列中的潜路径障碍。在这里，我们展示了基于Cu/SiO2/Pt双极电阻开关的CRS单元的垂直集成。制作了CRS电池并进行了电特性测试，显示出高的电阻比（罗夫/罗恩>; 1500）和快的开关速度（<; 120 μs）。这些结果是朝着实现基于高密度无源纳米棒阵列的千兆位存储器器件又迈进了一步。
Recently, the sneak-path obstacle in passive crossbar arrays has been overcome by the invention of complementary resistive switches (CRSs) consisting of two bipolar antiserially connected memristive elements. Here, we demonstrate the vertical integration of CRS cells based on Cu/SiO2/Pt bipolar resistive switches. CRS cells were fabricated and electrically characterized, showing high resistance ratios (Roff/Ron >; 1500) and fast switching speed (<; 120 μs). The results are one step further toward the realization of high-density passive nanocrossbar-array-based gigabit memory devices.