Triple quantum dot device designed for three spin qubits
Triple quantum dot device designed for three spin qubits
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DOI：
10.1063/1.3518919
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发表时间：
2010-11
影响因子：
4
通讯作者：
T. Takakura;M. Pioro-Ladrière;T. Obata;Y. Shin;R. Brunner;K. Yoshida;T. Taniyama;S. Tarucha
中科院分区：
文献类型：
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作者：
T. Takakura;M. Pioro-Ladrière;T. Obata;Y. Shin;R. Brunner;K. Yoshida;T. Taniyama;S. Tarucha
限制在量子点中的电子自旋是一种很有前途的实验量子比特候选者。为了实现三自旋量子比特系统，我们设计了适合于横向三量子点的分裂微磁体。从杂散磁场分布的数值模拟中，可以获得场梯度~ 0.8 T/μm和面内分量差异~ 10 mT，从而实现对三个量子比特的电气和可寻址操作。此外，该技术可以在现实的多个量子点中应用多达25个量子位。为了实现这种三量子比特系统，首先制作了一个相关的三量子点器件，并观察了其特征电荷态。
Electron spin confined in quantum dots is a promising candidate for experimental qubits. Aiming at realizing a three spin-qubit system, we designed split micromagnets suitable for the lateral triple quantum dots. From numerical simulations of the stray magnetic field distribution, field gradients ∼0.8 T/μm and differences of in-plane components ∼10 mT can be attained, which enable the electrical and addressable manipulation of three qubits. Furthermore, this technique can be applied for up to 25 qubits in realistic multiple quantum dots. For the first step of implementing such three-qubit systems, a relevant triple quantum dot device has been fabricated and characteristic charge states were observed.