Incorporating Aluminum Plasmonic Nanohemisphere Arrays into Organic Ultraviolet Photodetectors for Improved Photoresponse
Incorporating Aluminum Plasmonic Nanohemisphere Arrays into Organic Ultraviolet Photodetectors for Improved Photoresponse
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DOI：
10.1021/acsanm.9b01586
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发表时间：
2019-10-01
影响因子：
5.9
通讯作者：
Yu, Qiuming
中科院分区：
文献类型：
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作者：
Esopi, Monica R.;Yu, Qiuming
铝纳米结构，支持表面等离子体共振在紫外光谱范围内，被纳入到传统的有机紫外光电探测器与结构的氧化铟锡（ITO）/聚（3，4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT：PSS）/聚乙烯（9，9-二辛基芴-alt-联噻吩）（F8 T2）：[6，6]-苯基C（71）-丁酸甲酯（PC 71 BM）/LiF/Al。将纳米半球阵列（NHSAs）压印到软有机活性层的顶表面中，从而将图案转移到随后的LiF和Al的热沉积层上。时域差分（3D-FDTD）电磁仿真。对于具有NHSA顶部的设备，显示出UV活性层吸收率的改善和活性层顶部纳米半球区域中电场的增强。NHSA顶部的影响被认为是更显着的薄有源层的设备，并逐渐减少与有源层厚度的增加。制造的NHSAtop器件与薄的有源层表现出改善的光响应方面的外部量子效率，特定的检测和开关响应速度相比，在330 nm的照明和0至1 V的偏压下的平顶设备。在这项工作中开发的方法提供了一个通用的和有效的方式，将等离子体纳米结构到光电器件，以提高器件的性能。
Aluminum nanostructures, which support surface plasmon resonances in the UV spectral range, were incorporated into conventional organic UV photodetectors with a structure of indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2):[6,6]-phenylC(71)-butyric acid methyl ester (PC71BM)/LiF/Al. Nanohemisphere arrays (NHSAs) were imprinted into the top surface of the soft organic active layer, thus transferring the pattern to the subsequently thermally deposited layers of LiF and Al. NHSAtop devices and flat-top control devices were investigated by 3-dimensional finite -difference time -domain (3D-FDTD) electromagnetic simulations. Improved UV active layer absorbance and enhanced electric fields in the nanohemispheric region at the top of the active layer were shown for devices with the NHSA-top. The impact of the NHSA-top was found to be more significant for devices with thin active layers and to gradually decrease with increasing active layer thickness. Fabricated NHSAtop devices with thin active layers exhibited improved photoresponse in terms of external quantum efficiency, specific detectivity and on off response speed compared to flat-top devices under 330 nm illumination and 0 to 1 V bias. The method developed in this work provides a versatile and effective way to incorporate plasmonic nanostructures into optoelectronic devices to enhance device performance.