Dislocation behavior in seed‐cast grown Si ingots based on crystallographic orientation
Dislocation behavior in seed‐cast grown Si ingots based on crystallographic orientation
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DOI：
10.1002/pip.2708
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发表时间：
2016-12
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影响因子：
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通讯作者：
K. Jiptner;Y. Miyamura;H. Harada;B. Gao;K. Kakimoto;T. Sekiguchi
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文献类型：
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作者：
K. Jiptner;Y. Miyamura;H. Harada;B. Gao;K. Kakimoto;T. Sekiguchi
本研究集中于在不同的晶体学取向下通过籽晶铸造方法生长Si期间的位错行为。结合了两种方法：（1）不同晶种取向的Si晶体生长和（2）浮区Si退火实验，以获得纯热应力诱导的位错密度。主要关注的是（111）和（100）生长方向之间的差异。结果发现，周边区域主要由热应力诱导的位错密度。中心锭区主要由其他位错源。通过比较（100）和（111）取向，发现位错运动存在差异。这种差异是由滑移系统的不同激活引起的，从而在（111）取向上产生长滑移线。结果表明，数值模拟在描述这种长程位错滑移方面存在问题。版权所有© 2015约翰威利父子有限公司
This study concentrates on dislocation behavior during Si growth by the seed‐cast method in different crystallographic orientations. Two methods were combined: (1) Si crystal growth in different seed orientations and (2) float zone Si‐annealing experiment to obtain the purely thermal stress‐induced dislocation density. The main focus is on the difference between the (111) and the (100) growth directions. It is found that peripheral areas are dominated by thermal stress‐induced dislocation densities. Central ingot areas are dominated by other dislocation sources. By comparing the (100) and the (111) orientations, it was found that a difference in dislocation motion exists. This difference is caused by a different activation of slip systems, causing long slip lines in the (111) orientation. It is shown that numerical simulation has problems describing this long‐range dislocation slip. Copyright © 2015 John Wiley & Sons, Ltd.