Coherent control of electron spin qubits in silicon using a global field
Coherent control of electron spin qubits in silicon using a global field
复制标题
使用全局场对硅中电子自旋量子位进行相干控制
DOI:
10.1038/s41534-022-00645-w
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发表时间:
2021
影响因子:
7.6
通讯作者:
J. Pla
中科院分区:
文献类型:
--
作者:
E. Vahapoglu;J. Slack;R. Leon;W. H. Lim;F. Hudson;T. Day;J. D. Cifuentes;T. Tanttu;C. Yang;A. Saraiva;N. Abrosimov;H. Pohl;M. Thewalt;A. Laucht;A. Dzurak;J. Pla
Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors. Despite the scalability advantage of using silicon technology, realising a quantum computer with the millions of qubits required to run some of the most demanding quantum algorithms poses several outstanding challenges, including how to control many qubits simultaneously. Recently, compact 3D microwave dielectric resonators were proposed as a way to deliver the magnetic fields for spin qubit control across an entire quantum chip using only a single microwave source. Although spin resonance of individual electrons in the globally applied microwave field was demonstrated, the spins were controlled incoherently. Here we report coherent Rabi oscillations of single electron spin qubits in a planar SiMOS quantum dot device using a global magnetic field generated off-chip. The observation of coherent qubit control driven by a dielectric resonator establishes a credible pathway to achieving large-scale control in a spin-based quantum computer.
影响因子:
6.4
作者:
Preskill, John
通讯作者:
Preskill, John