Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1-xN active regions
Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1-xN active regions
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DOI：
10.1088/0957-4484/25/45/455201
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发表时间：
2014-11-14
期刊：
影响因子：
3.5
通讯作者：
Myers, Roberto C.
中科院分区：
文献类型：
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作者：
Kent, Thomas F.;Carnevale, Santino D.;Myers, Roberto C.
在本报告中，我们展示了由无催化剂 III 族氮化物纳米线制成的发光二极管的有源区发射波长从 365 nm 到 250 nm 的带隙调谐。通过电致发光 (EL) 和光致发光光谱在各种有源区域成分上研究纳米线异质结构和制造器件的光学特性。据观察，对于典型的纳米线等离子体辅助分子束外延生长条件，将发射调谐到短于300 nm的波长受到光学活性缺陷能级的存在的阻碍。我们表明，通过提高 AlGaN 纳米线的生长温度，可以抑制这种缺陷发射。这些发现应用于纳米线发光二极管有源区的生长，产生峰值 EL 为 250 nm 的偏振诱导纳米线发光二极管。
In this report, we demonstrate band gap tuning of the active region emission wavelength from 365 nm to 250 nm in light emitting diodes fashioned from catalyst-free III-nitride nanowires. Optical characteristics of the nanowire heterostructures and fabricated devices are studied via electroluminescence (EL) and photoluminescence spectroscopy over a wide range of active region compositions. It is observed that for typical nanowire plasma assisted molecular beam epitaxy growth conditions, tuning of emission to wavelengths shorter than 300 nm is hampered by the presence of an optically active defect level. We show that by increasing the AlGaN nanowire growth temperatures this defect emission can be suppressed. These findings are applied to growth of the active region of a nanowire light emitting diode, resulting in a polarization-induced nanowire light emitting diode with peak EL at 250 nm.