Interfacial microstructure of the Si3N4/Si3N4 joint brazed with Cu–Pd–Ti filler alloy

Interfacial microstructure of the Si3N4/Si3N4 joint brazed with Cu–Pd–Ti filler alloy
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DOI:
10.1016/j.jeurceramsoc.2005.11.001
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发表时间:
2006
影响因子:
5.7
通讯作者:
J. Zhang;Y. Zhou;M. Naka
J. Zhang;Y. Zhou;M. Naka
中科院分区:
材料科学1区
文献类型:
--
作者:
J. Zhang;Y. Zhou;M. Naka

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采用Cu-Pd-Ti钎料进行活性钎焊,实现了Si3N4陶瓷的自焊。用电子探针、透射电子显微镜和X射线衍射仪分析了Si3N4/Si3N4接头的界面微观结构。结果表明,在Si3N4陶瓷与填充合金的界面处形成了厚度约为5μm的TiN反应层。TiN反应层由两个区域组成,一个位于Si3N4陶瓷旁边,颗粒尺寸为100 nm,另一个与填充合金连接,颗粒尺寸为1μm。接头的微观组织可描述为:细小颗粒的Si3N4陶瓷/TiN层/粗大颗粒的TiN层/Cu[Pd]固溶体。在Cu[Pd]固溶体中间层中形成了Pd2Si、PdTiSi、Ti5Si3和TiN等新相。随着钎焊温度从1100℃增加到1200℃,TiN反应层的厚度没有变化。同时,Cu[Pd]固溶体中TiN和Pd2Si相的数量和尺寸增加,而PdTiSi相的数量减少。
Si3N4ceramic was jointed with itself by active brazing with a Cu–Pd–Ti filler alloy. Interfacial microstructure of the Si3N4/Si3N4joint was analyzed by EPMA, TEM and X-ray diffract meter. The results indicate that a TiN reaction layer with a thickness about 5μm is formed at the interface between Si3N4ceramic and filler alloy. The TiN reaction layer is composed of two zones: one next to the Si3N4ceramic with grains of 100nm and the other zone that connects with the filler alloy and has grains of 1μm. The microstructure of the joint can be described as: Si3N4ceramic/TiN layer with fine grains/TiN layer with coarsen grains/Cu[Pd] solid solution. Some new phases, such as Pd2Si, PdTiSi, Ti5Si3and TiN, were formed in the Cu[Pd] solid solution interlayer. With increasing brazing temperature from 1100°C to 1200°C, the thickness of the TiN reaction layer is not changed. Meanwhile, the amount and size of the TiN and Pd2Si phases in the Cu[Pd] solid solution increase, while, the amount of the PdTiSi phase decreases.