Synergistic Effect of Ionization and Displacement Damage in NPN Transistors Caused by Protons With Various Energies
Synergistic Effect of Ionization and Displacement Damage in NPN Transistors Caused by Protons With Various Energies
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不同能量质子引起NPN晶体管电离和位移损伤的协同效应
DOI：
10.1109/tns.2015.2415805
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发表时间：
2015-06-01
影响因子：
1.8
通讯作者：
Yang, Jianqun
中科院分区：
文献类型：
--
作者：
Li, Xingji;Liu, Chaoming;Yang, Jianqun
基于2N2222NPN双极结晶体管，研究了3 MeV、5 MeV和10 MeV质子引起的电离和位移缺陷之间的协同效应。高能质子可以入射到硅(Si)BJT上，在硅体中产生位移缺陷，在BJT的氧化层中产生电离损伤。电离损伤和位移损伤都会导致BJT的电流增益下降。在给定的置换剂量下，10 MeV的质子对2N2222 NPN BJT的电流增益的影响最大，而3 MeV的质子对电流增益的影响最小。在这种情况下，非电离能量损失(NIEL)方法不适合对3 MeV、5 MeV和10 MeV质子引起的位移损伤进行归一化，这归因于电离和位移损伤的协同效应。用深能级瞬变谱(DLTS)研究了3 MeV、5 MeV和10 MeV质子辐照对2N2222晶体管基极-集电极结位移缺陷中心的影响。电学参数与DLTS结果的比较表明，高能质子电离损伤引起的界面陷阱扩展到发射极基区耗尽层，导致NPN BJT基区-集电极结位移损伤增强效应。同时，在DLTS测量过程中使用的偏置电压会影响DLTS信号的特性。随着反向偏置的增加，VO、V2(=/-)、E4和V2(-/0)+E5中心的ΔC/C值增大。
Based on 2N2222 NPN bipolar junction transistors (BJTs), synergistic effect between ionization and displacement defects induced by 3 MeV, 5 MeV and 10 MeV protons were researched. High-energy protons can be incident upon the silicon (Si) BJTs, producing displacement defects in silicon bulk and ionization damage in the oxide layer of BJTs, respectively. Both ionization and displacement damage result in the degradation of current gain of BJTs. At a given displacement dose, 10 MeV protons induce the maximum degradation of current gain of 2N2222 NPN BJTs, while 3 MeV protons cause the minimum degradation. In this case, non-ionizing energy loss (NIEL) methodology is not suitable to normalize the displacement damage induced by 3 MeV, 5 MeV and 10 MeV protons, which is attributed to the synergistic effect of ionization and displacement damage. The displacement defect centers in based-collector junction of 2N2222 transistor induced by 3 MeV, 5 MeV and 10 MeV proton exposures, were discovered and characterized by deep level transient spectroscopy (DLTS). Based on the comparison between the electrical parameters and the DLTS results, it is shown that, interface traps due to ionization damage induced by high-energy protons spread the emitter-base depletion layer, leading to the enhancement effects to displacement damage in the base-collector junction of NPN BJT. Meanwhile, bias voltage used during DLTS measurement influence characteristics of DLTS signals. With the increasing reverse bias, the value of ΔC/C for VO, V2( = / -), E4 and V2(- /0) + E5 centers increases.