ac photoconductivity of hydrogenated amorphous silicon: Influence of long-range potential fluctuations
ac photoconductivity of hydrogenated amorphous silicon: Influence of long-range potential fluctuations
复制标题
氢化非晶硅的交流光电导：长程电位波动的影响
DOI：
10.1103/physrevb.65.165213
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发表时间：
2002
影响因子：
3.7
通讯作者：
A. Ganjoo
中科院分区：
文献类型：
--
作者：
K. Shimakawa;A. Ganjoo
结果表明，氢化非晶硅（a-Si:H）在温度范围（20<T<300 K）内的交流光导率主要受介电弛豫时间的影响。讨论了由介电弛豫时间支配的特征，讨论了对带边有显著调制作用的长程电位波动。用渗透路径法给出了这种情况下的直流跳变光电导率表达式。
It is suggested that the ac photoconductivity of hydrogenated amorphous silicon (a-Si:H) in the temperature region (20<T<300 K) is dominated by dielectric relaxation time. The features dominated by dielectric relaxation time are discussed in terms of long-range potential fluctuations that modulate the band edges significantly. An expression for dc hopping photoconductivity for this situation, using percolation path method, is presented.