Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN
Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN
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DOI：
10.1063/1.2168253
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发表时间：
2006-01
影响因子：
4
通讯作者：
J. Simon;A. Wang;H. Xing;S. Rajan;D. Jena
中科院分区：
文献类型：
--
作者：
J. Simon;A. Wang;H. Xing;S. Rajan;D. Jena
通过利用GaN和应变AlGaN的组分梯度层之间的自发极化和压电极化的差异，我们展示了宽度（30-100 nm）和密度（1-5× 1018 cm ~ 3）可调的三维电子板。电离杂质散射的去除导致在相对高的迁移率限制在低温下的合金散射，并在室温下的合金和极性光学声子散射的组合。由于这种平板中的可调电子-电子相互作用，它们提供了一个理想的系统来探测III-V族氮化物半导体中的高场输运物理，特别是热声子效应。
By exploiting the difference in spontaneous and piezoelectric polarization between GaN and compositionally graded layers of strained AlGaN, we demonstrate three-dimensional electron slabs of tunable widths (30–100 nm) and densities (1–5×1018cm3). Removal of ionized impurity scattering results in relatively high mobilities limited by alloy scattering at low temperatures, and by a combination of alloy and polar optical phonon scattering at room temperature. Owing to the tunable electron-electron interactions in such slabs, they offer an ideal system to probe high-field transport physics in the III-V nitride semiconductors in general, and the hot-phonon effect in particular.