Use of very low energy in situ focused ion beams for three‐dimensional dopant patterning during molecular beam epitaxial growth
Use of very low energy in situ focused ion beams for three‐dimensional dopant patterning during molecular beam epitaxial growth
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在分子束外延生长过程中使用极低能量原位聚焦离子束进行三维掺杂剂图案化
DOI：
10.1116/1.588698
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
G. W. Smith
中科院分区：
文献类型：
--
作者：
P. Sazio;J. H. Thompson;G. Jones;E. Linfield;D. Ritchie;M. Houlton;G. W. Smith
在分子束外延生长期间的原位聚焦离子束掺杂允许制造新颖的半导体结构和器件，否则使用标准光刻、平面处理是无法获得的。在这项技术中，在传统的GaAs分子束外延（MBE）中使用的热掺杂剂渗出室被取代的扫描硅源聚焦离子束柱。因此，可以在晶体生长期间将掺杂剂图案直接写入半导体晶片中。因此，通过MBE提供的对生长（z）方向上的元素组成的精确控制与横向（xy）平面中的聚焦掺杂剂离子束的高空间分辨率相结合。使用这种技术，以100 eV的Si离子着陆能量生长高质量的体掺杂GaAs，在1.1 ×1017 cm-3的载流子浓度下获得3400 cm 2 V-1 s-1（185 K）的峰值迁移率。文中还讨论了GaAs中自由载流子浓度与入射离子能量的关系，以及GaAs/AlGaAs组件的制备。
In situ focused ion beam doping during molecular beam epitaxial growth allows the fabrication of novel semiconductor structures and devices otherwise unobtainable using standard lithographic, planar processing. In this technique, the thermal dopant effusion cell used in conventional GaAs molecular beam epitaxy (MBE) is replaced by a scanning Si source focused ion beam column. It is therefore possible to write dopant patterns directly into the semiconductor wafer during crystal growth. Precise control over the elemental composition in the growth (z) direction afforded by MBE is thus combined with the high spatial resolution of the focused dopant ion beam in the lateral (xy) plane. High quality bulk doped GaAs was grown with a Si ion landing energy of 100 eV using this technique, attaining a peak mobility of 3400 cm2 V−1 s−1 (185 K) at a carrier concentration of 1.1 ×1017 cm−3. The dependence of free carrier concentration in GaAs as a function of incident ion energy, and the fabrication of GaAs/AlGaAs modul...