Fabrication of non-polar GaN based highly responsive and fast UV photodetector
Fabrication of non-polar GaN based highly responsive and fast UV photodetector
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DOI：
10.1063/1.4978427
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发表时间：
2017-03-06
影响因子：
4
通讯作者：
Gupta, Govind
中科院分区：
文献类型：
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作者：
Gundimeda, Abhiram;Krishna, Shibin;Gupta, Govind
我们报告了在 r 平面 (1-102) 蓝宝石衬底上外延生长的非极性 (11-20)、几乎无应力的氮化镓 (GaN) 薄膜上制造紫外光电探测器。高结晶薄膜导致在表面形成两个多面三角形岛状结构。所制造的 GaN 紫外光电探测器在室温下 5V 偏压下表现出 340 mA/W 的高响应度，这是 a-GaN/r-蓝宝石薄膜报道的最佳性能。还获得了 1.24 x 10(9) Jones 的探测灵敏度和 2.4 x 10(-11) WHZ(-1/2) 的噪声等效功率。计算出的上升时间和衰减时间分别为 280 ms 和 450 ms，这是非极性 GaN 紫外光电探测器报道的最快响应时间。这种高性能器件证明非极性 GaN 可以作为基于紫外光电探测器的应用的优异光电导材料。
We report the fabrication of ultraviolet photodetector on non-polar (11-20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1-102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 x 10(9) Jones and noise equivalent power of 2.4 x 10(-11) WHz(-1/2) were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.