Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies
Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies
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DOI：
10.1021/nl201432g
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发表时间：
2011-08-01
期刊：
影响因子：
10.8
通讯作者：
Ferrari, A. C.
中科院分区：
文献类型：
--
作者：
Cancado, L. G.;Jorio, A.;Ferrari, A. C.
我们提出了一个拉曼研究Ar+轰击石墨烯样品随着离子剂量的增加。这使我们能够控制、增加缺陷量。我们发现，I的D和G峰强度之间的比率，对于一个给定的缺陷密度，强烈地依赖于激光激发能量。我们量化了这种效应，并提出了一个简单的方程，通过拉曼光谱的任何可见光激发能量的点缺陷密度的测定。我们注意到，对于所有的激发，D到G的强度比达到最大的缺陷间的距离类似于3纳米。因此，给定的比率可以对应于高于或低于最大值的两个不同的缺陷密度。对G峰宽及其色散随激发能的变化的分析解决了这一模糊性。
We present a Raman study of Ar+-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that I the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an interdefect distance similar to 3 nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.