Microscopic tomography with ultra-HVEM and applications
Microscopic tomography with ultra-HVEM and applications
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DOI：
10.1016/j.ultramic.2007.06.008
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发表时间：
2008-02-01
期刊：
影响因子：
2.2
通讯作者：
Mori, Hirotaro
中科院分区：
文献类型：
--
作者：
Takaoka, Akio;Hasegawa, Toshiaki;Mori, Hirotaro
大坂大学的加速电压为3 MV的ultra-HVEM能够对厚样品实现出色的穿透力和分辨率。我们获得了5 μ m厚的切片的图像，倾斜角度高达70度的生物样品和观察棒形样品的硅器件的缺失区。这些功能使超HVEM成为电子断层扫描三维观察的宝贵延伸。在本文中，我们介绍了超高压电磁层析成像的方面，具体而言，放大倍率，厚样品的图像模糊量和电子染色方法。最后，我们给出了一些典型的应用领域中的细胞生物学，病理学和电气工程。(c)2007 Elsevier B. V.保留所有权利。
The ultra-HVEM with an accelerating voltage of 3 MV at Osaka University is capable of achieving excellent penetration and resolution for thick specimens. We obtained images of 5-mu m-thick slices tilted at angles of up to 70 degrees for biological samples and observed stick-shaped samples of Si devices free from missing zone. These features make the ultra-HVEM an invaluable extension of 3D observation by electron tomography. In this paper, we introduce aspects of ultra-HVEM tomography; specifically, the magnification, the amount of image blurring for thick samples and the electron staining method. Finally, we give some typical applications in the fields of cell biology, pathology and electrical engineering. (c) 2007 Elsevier B.V. All rights reserved.