Tsuyoshi Hatano: "Calculation of Electrical Properties of Novel Double-Barrier MOS Transistors" Japanese Journal of Applied Physics. Vol.38,Part 1 No.1B. 399-402 (1999)
Tsuyoshi Hatano: "Calculation of Electrical Properties of Novel Double-Barrier MOS Transistors" Japanese Journal of Applied Physics. Vol.38,Part 1 No.1B. 399-402 (1999)
复制标题
Tsuyoshi Hatano:“新型双势垒 MOS 晶体管的电性能计算”日本应用物理学杂志。
DOI:
--
复制
发表时间:
--
期刊:
影响因子:
--
通讯作者:
中科院分区:
文献类型:
--
作者: