Extraction of the 4H-SiC/SiO2 Barrier Height Over Temperature
Extraction of the 4H-SiC/SiO2 Barrier Height Over Temperature
复制标题
4H-SiC/SiO2 势垒高度随温度变化的提取
DOI：
10.1109/ted.2019.2955181
复制
发表时间：
2020
影响因子：
3.1
通讯作者：
H. Morel
中科院分区：
文献类型：
--
作者：
O. Aviñó;B. Asllani;C. Buttay;C. Raynaud;H. Morel
研究了SiC/SiO_2界面势垒高度在173 ~ 523 K温度范围内的变化规律。这些数据补充了文献，提供了一个更好的了解这个参数，这是研究只在一个更有限的温度范围内，从来没有在低温。值得强调的是，测量的样品显示出的势垒高度温度依赖性非常接近理论值（ε-0.7 meVK-1）。在473 K以上，某些样品的势垒高度似乎下降得更快，达到1.4 meVK−1。如果在更高的温度下保持这种更快的下降速率，可能会限制4 H-SiC MOSFET在高温应用中的性能或可靠性。预计本文提供的数据将能够更准确地建模功率MOSFET氧化物层中的栅极电流和电荷注入，从而更可靠地预测4 H-SiC MOSFET的氧化物寿命。
The behavior of the barrier height of the SiC/SiO2 interface has been investigated over a wide temperature range, from 173 K to 523 K. These data complement the literature, providing a better knowledge of this parameter, which was studied only over a more restricted temperature range, and never before for low temperatures. It is highlighted that the measured samples exhibit a barrier height temperature dependence very near to the theoretical one (≈−0.7 meVK−1). Beyond 473 K, the barrier height seems to drop faster for some samples, reaching ≈−1.4 meVK−1. If this faster decreasing rate is maintained for higher temperatures, it could limit 4H-SiC MOSFETs performances or reliability for high-temperature applications. It is expected that the data provided here will allow for more accurate modeling of the gate current and the charge injection in the oxide layer of power MOSFETs, leading to more reliable predictions of the oxide lifetime for 4H-SiC MOSFETs.