Corporate-Feed Slotted Waveguide Array Antenna in the 350-GHz Band by Silicon Process
Corporate-Feed Slotted Waveguide Array Antenna in the 350-GHz Band by Silicon Process
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DOI：
10.1109/tap.2016.2631132
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发表时间：
2017-01-01
影响因子：
5.7
通讯作者：
Saito, Mikiko
中科院分区：
文献类型：
--
作者：
Tekkouk, Karim;Hirokawa, Jiro;Saito, Mikiko
提出了一种在350 GHz频段具有宽带增益和反射特性的企业馈电缝隙波导阵列天线。为了提高传统扩散键合工艺制作的薄层合板的刻蚀精度，提出了一种刻蚀精度低于±5µm的新工艺，该工艺采用硅片制作，采用深反应离子刻蚀工艺。这些都是镀金，然后用扩散焊接工艺进行粘接。镀金晶片的有效电导率估计为1.6x10(7)S/m，单位长度损耗为1.1dB/cm。采用该工艺设计并制作了350 GHz频段的16×16阵元阵列天线。通过在该频段的测量，首次证明了天线增益的宽带特性。仿真结果为50.8 GHz，测量结果为44.6 GHz。
A corporate-feed slotted waveguide array antenna with broadband characteristics in terms of gain and reflection in the 350-GHz band is proposed. To improve the etching accuracy of the thin laminated plates with the conventional diffusion bonding process, a new fabrication process has been developed, where the etching accuracy is lower than +/- 5 mu m. In this process, the laminated plates are made with silicon wafers and etched by deep reactive ion etcher process. These are gold plated then bonded with the diffusion bonding process. The estimated effective conductivity of the gold plated wafer is 1.6 x 10(7) S/m. The loss per unit length is 1.1 dB/cm. A 16x16 element array antenna has been designed and fabricated in the 350-GHz band with the proposed process. The broadband characteristic in terms of the antenna gain is demonstrated for the first time by measurement in this frequency band. The 3-dB down gain bandwidth is 50.8 GHz in simulation and is 44.6 GHz in measurement.