Low-Temperature One-Step Growth of AION Thin Films with Homogenous Nitrogen-Doping Profile by Plasma-Enhanced Atomic Layer Deposition
Low-Temperature One-Step Growth of AION Thin Films with Homogenous Nitrogen-Doping Profile by Plasma-Enhanced Atomic Layer Deposition
复制标题
等离子体增强原子层沉积低温一步生长具有均匀氮掺杂分布的 AION 薄膜
DOI：
10.1021/acsami.7b12262
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发表时间：
2017-11-08
影响因子：
9.5
通讯作者：
Zhang, David Wei
中科院分区：
文献类型：
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作者：
Chen, Hong-Yan;Lu, Hong-Liang;Zhang, David Wei
采用等离子体增强原子层沉积(PEALD)技术在低温下制备了均匀氮掺杂的AlON薄膜。在本工作中，在185℃的较低温度下，将NH3和O-2的前体同时引入到PEALD生长过程中，发现当添加少量O-2时，所获得的薄膜的成分迅速从AIN转变为Al_2O_3。因此，要实现AlON的生长，NH3：O-2应保持在较高的水平(>；85%)。得益于这种生长方法，氮可以均匀地掺杂在整个薄膜中。此外，AlON薄膜的表面粗糙度比AIN薄膜和Al_2O_3薄膜的表面粗糙度都要低。Al2p和N的X射线光电子能谱表明，AlON薄膜由Al-N、Al-O和N-Al-O键组成。此外，通过对Si2p谱的分析，提出了AlON薄膜的三层结构，并通过透射电子显微镜表征对其进行了验证。最后，电学和光学测试表明，本工作制备的AlON薄膜既可以作为晶体管应用，也可以作为光伏应用中的减反射层。用作栅电介质
The AlON film with homogeneous nitrogen-doping profile was grown by plasma-enhanced atomic layer deposition (PEALD) at low temperature. In this work, the precursors of the NH3 and the O-2 were simultaneously introduced into the chamber during the PEALD growth at a relatively low temperature of 185 degrees C. It is found that the composition of the obtained film quickly changes from AIN to Al2O3 when a small amount of O-2 is added. Thus, the NH3:O-2 ratio should be maintained at a relatively high level (>85%) for realizing the AlON growth. Benefited from the growth method, the nitrogen can be doped evenly in the entire film. Moreover, the AlON films exhibit a lower surface roughness than the AIN as well as the Al2O3 ones. The Al 2p and N Is X-ray photoelectron spectra show that the AlON film is composed of Al-N, Al-O, and N-Al-O bonds. Moreover, a three-layer construction of the AlON film is proposed through the Si 2p spectra analysis and reconfirmed by the transmission electron microscopy characterization. At last, the electrical and optical tests indicate that the AlON films prepared in this work can be transistor application as well as the antireflection layer in photovoltaic application. employed as the gate dielectric in