Lens-integrated THz imaging arrays in 65nm CMOS technologies

Lens-integrated THz imaging arrays in 65nm CMOS technologies
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DOI：
10.1109/rfic.2011.5940670
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发表时间：
2011-06
期刊：
2011 IEEE Radio Frequency Integrated Circuits Symposium
影响因子：
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通讯作者：
H. Sherry;R. Al Hadi;J. Grzyb;E. Ojefors;A. Cathelin;A. Kaiser;U. Pfeiffer
H. Sherry;R. Al Hadi;J. Grzyb;E. Ojefors;A. Cathelin;A. Kaiser;U. Pfeiffer
中科院分区：
其他
文献类型：
--
作者：
H. Sherry;R. Al Hadi;J. Grzyb;E. Ojefors;A. Cathelin;A. Kaiser;U. Pfeiffer

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提出并表征了与超半球硅透镜集成的THzcmos成像器。FPA采用65 nm CMOS体技术和SOI技术实现。0.65太赫兹的透镜集成探测器在SOI和BUBLE的正面照明下，信噪比分别提高了15db和20db。该透镜提高了探测器的响应度RV，测得最小噪声等效功率NEP为17pW/√Hz。给出了太赫兹图像。
THz CMOS imagers integrated with hyperhemispherical Si-lenses are presented and characterized. FPAs are implemented in 65nm CMOS bulk and SOI technologies. Lens-integrated detectors at 0.65 THz show an increase of 15dB and 20dB in SNR compared to front-side illumination for SOI and bulk respectively. The responsivities Rv are increased and a minimum noise-equivalent power NEP of 17pW/√Hz is measured for SOI detectors with the lens. THz Images are presented.