The influence of Si-O-Zr bonds on the crystal-growth inhibition of zirconia prepared by the glycothermal method
The influence of Si-O-Zr bonds on the crystal-growth inhibition of zirconia prepared by the glycothermal method
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DOI：
10.1016/s0924-0136(03)00157-2
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发表时间：
2003-05-10
影响因子：
6.3
通讯作者：
Inoue, M
中科院分区：
文献类型：
--
作者：
Kongwudthiti, S;Praserthdam, P;Inoue, M
以正丙醇锆和正硅酸乙酯为原料，在1，4-丁二醇中制备了Si/Zr比分别为0.04，0.08和0.15的SiO2改性ZrO 2。用FT-IR和XRD对产物进行了表征。FT-IR光谱显示反应过程中形成的Si-O-Zr键的存在，表明粉末的高度均匀性。Si-O-Zr键的存在阻碍了煅烧时的晶体生长。(C)2003 Elsevier Science B. V.保留所有权利。
SiO2-modified ZrO2 with the Si/Zr ratios of 0.04, 0.08, and 0.15 were prepared by the reaction of zirconium n-propoxide and tetraethyl orthosilicate in 1,4-butanediol. The products were characterized by FT-IR and XRD. The FT-IR spectra exhibit the presence of Si-O-Zr bonds formed during the reaction, indicating a high degree of powder homogeneity. The presence of Si-O-Zr bonds retards the crystal growth upon calcination. (C) 2003 Elsevier Science B.V. All rights reserved.