Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells
Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells
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DOI：
10.1063/5.0012131
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发表时间：
2020-07-20
影响因子：
4
通讯作者：
Binks, D. J.
中科院分区：
文献类型：
--
作者：
Church, S. A.;Ding, B.;Binks, D. J.
闪锌矿InGaN/GaN量子阱通过去除类似结构中存在的强电场，潜在地提高了绿光发射的效率。然而，高密度的层错可能会对这些系统中的复合产生影响。在这项工作中，扫描电子显微镜和能量色散X射线测量表明，一维纳米结构是由于层错附近的铟偏析而形成的。在光致发光实验中，这些结构发出可见光，在10K时光学偏振高达86%，在室温下高达75%。随着势垒宽度从2 nm增加到8 nm，发射红移和展宽。光致发光激发测量表明，载流子被这些结构从剩余的量子阱中捕获并重新组合，发出沿这些纳米结构长度偏振的光。
Zincblende InGaN/GaN quantum wells offer a potential improvement to the efficiency of green light emission by removing the strong electric fields present in similar structures. However, a high density of stacking faults may have an impact on the recombination in these systems. In this work, scanning transmission electron microscopy and energy-dispersive x-ray measurements demonstrate that one-dimensional nanostructures form due to indium segregation adjacent to stacking faults. In photoluminescence experiments, these structures emit visible light, which is optically polarized up to 86% at 10K and up to 75% at room temperature. The emission redshifts and broadens as the well width increases from 2nm to 8nm. Photoluminescence excitation measurements indicate that carriers are captured by these structures from the rest of the quantum wells and recombine to emit light polarized along the length of these nanostructures.