MACROSCOPIC PHYSICS OF THE SILICON INVERSION LAYER
MACROSCOPIC PHYSICS OF THE SILICON INVERSION LAYER
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DOI：
10.1103/physrevb.35.7959
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发表时间：
1987-05-15
影响因子：
3.7
通讯作者：
TIERSTEN, HF
中科院分区：
文献类型：
--
作者：
ANCONA, MG;TIERSTEN, HF
半导体中电子和空穴的扩散漂移描述经常用于获得对半导体器件的物理和工程的详细理解。我们表明，通过概括的电子气的状态方程，包括密度梯度依赖性，这个标准的描述可以扩展到描述强反型层所表现出的量子力学行为。
The diffusion-drift description of electrons and holes in a semiconductor is frequently used to obtain a detailed understanding of the physics and engineering of semiconductor devices. We show that, by generalizing the equation of state of the electron gas to include density-gradient dependences, this standard description can be extended to describe much of the quantum-mechanical behavior exhibited by strong inversion layers.