Influence of ZnO buffer layers on the optoelectronic properties in Ga-doped ZnO thin films prepared by RF magnetron sputtering on PET substrates
Influence of ZnO buffer layers on the optoelectronic properties in Ga-doped ZnO thin films prepared by RF magnetron sputtering on PET substrates
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ZnO缓冲层对射频磁控溅射PET基底Ga掺杂ZnO薄膜光电性能的影响
DOI：
10.1007/s10854-014-1962-7
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Lu Y. M.
中科院分区：
文献类型：
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作者：
Jia F.;Wang Q.;Zhu D. L.;Han S.;Cao P. J.;Liu W. J.;Zeng Y. X.;Lu Y. M.
采用射频磁控溅射法在聚对苯二甲酸乙二醇酯（PET）衬底上制备了Ga掺杂ZnO（GZO）薄膜，研究了ZnO缓冲层对GZO薄膜光电性能的影响。GZO/ZnO双层膜的电阻率比没有ZnO缓冲层的GZO膜的电阻率降低了一个数量级以上。X射线衍射结果表明，电性能的显着改善与结晶质量无关。基于X射线光电子能谱分析，它是建议后，引入ZnO缓冲层的电阻率下降归因于从PET衬底的水分和气体的扩散到GZO薄膜的抑制。扩散到GZO薄膜中的水分和气体会以带负电荷的氧物种作为受体吸附在薄膜表面。50 nm的缓冲层厚度足以达到最佳效果，随着ZnO缓冲层厚度的进一步增加，由于ZnO和GZO层的平行效应，样品中的电阻率将增加。ZnO缓冲层的引入对可见光范围内的平均透射率没有明显影响，所有样品的平均透射率都高约90%。
The influence of ZnO buffer layers on the optoelectronic properties in Ga-doped ZnO (GZO) thin films deposited on polyethylene terephthalate (PET) substrates by RF magnetron sputtering was investigated. The resistivity in GZO/ZnO bilayer films decreases significantly more than one order of magnitude than that in GZO film without a ZnO buffer layer. X-ray diffraction results show that the significant improvement of electrical properties is not related to the crystalline quality. Based on X-ray photoelectron spectroscopy analysis, it is suggested that the decrease in resistivity after the introduction of ZnO buffer layers is ascribed to the restraint of diffusion of moisture and gas from PET substrates to GZO thin films. The moisture and gas diffused into GZO films will be absorbed on the films’ surface in the form of negatively charged oxygen species acting as acceptors. Fifty nm buffer layer is thick enough to achieve the best effect, with further increase of the ZnO buffer layer thickness, the resistivity in the samples will increase due to the parallel effect of ZnO and GZO layers. The introduction of ZnO buffer layers has no obvious influence on the average transmittance in the visible range which is ~90 % high for all samples.