Van der Waals Nanowires with Continuously Variable Interlayer Twist and Twist Homojunctions
Van der Waals Nanowires with Continuously Variable Interlayer Twist and Twist Homojunctions
复制标题
DOI：
10.1002/adfm.202006412
复制
发表时间：
2020-12
影响因子：
19
通讯作者：
P. Sutter;J. Idrobo;E. Sutter
中科院分区：
文献类型：
--
作者：
P. Sutter;J. Idrobo;E. Sutter
在扭曲的二维晶体之间的货车范德华界面处的莫尔图案引起不同的光电激发，以及负责相关电子现象的窄色散带。与传统的，机械堆叠的平面扭曲云纹相比，最近的工作表明扭曲的货车德瓦尔斯界面自发地形成在纳米线的层状晶体，其中Eshelby扭曲由于轴向螺旋位错稳定的手征结构与小的层间旋转。本文报道了在硫化锗（GeS）货车德瓦耳斯纳米线中实现可调谐扭转的研究。锥形纳米线主机连续可变层间扭曲。位错（手性）和无缺陷（非手性）段之间的同质结是通过在生长过程中触发轴向位错的发射来获得的。跨这种结的测量，在这里使用本地吸收和发光光谱，提供了一个方便的工具，用于检测扭曲效应。结果确定了一个多功能的系统，三维双电子，探测莫尔物理，并实现莫尔结构，而没有等效的平面系统。
Moiré patterns at van der Waals interfaces between twisted 2D crystals give rise to distinct optoelectronic excitations, as well as, narrowly dispersive bands responsible for correlated electron phenomena. Contrasting with the conventional, mechanically stacked planar twist moirés, recent work shows twisted van der Waals interfaces spontaneously formed in nanowires of layered crystals, where Eshelby twist due to axial screw dislocations stabilizes a chiral structure with small interlayer rotation. Here, the realization of tunable twist in germanium(II) sulfide (GeS) van der Waals nanowires is reported. Tapered nanowires host continuously variable interlayer twist. Homojunctions between dislocated (chiral) and defect‐free (achiral) segments are obtained by triggering the emission of axial dislocations during growth. Measurements across such junctions, implemented here using local absorption and luminescence spectroscopy, provide a convenient tool for detecting twist effects. The results identify a versatile system for 3D twistronics, probing moiré physics, and for realizing moiré architectures without equivalent in planar systems.