Control of magnetic properties of MnGa films by Kr+ ion irradiation for application to bit patterned media
Control of magnetic properties of MnGa films by Kr+ ion irradiation for application to bit patterned media
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通过 Kr 离子辐照控制 MnGa 薄膜的磁性能，应用于位图介质
DOI：
10.1109/tmag.2013.2249501
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
D. Oshima
中科院分区：
文献类型：
--
作者：
池田 翔;伊藤浩之;石原昇;益一哉;D. Oshima
(001)在Cr（20 nm）/MgO（001）衬底上生长了取向的L10相MnGa薄膜，并对MnGa薄膜进行了Kr+离子辐照以控制其磁性能。在400°C的低温下得到了高度有序的MnGa薄膜，辐照前薄膜的饱和磁化强度Ms为450 emu/cc，单轴各向异性Kuof为7 × 106 erg/cc。随着离子剂量的增加，M_s和K_u逐渐减小，当剂量为1 × 1014 ions/cm ~ 2时，M_s和K_u变为零。而MnGa的矫顽力在注入剂量为1 × 1013 ions/cm ~ 2时略有增加，并随注入剂量的增加而急剧下降。通过微加工的抗蚀剂掩模的离子辐照，制备了间距尺寸为80 nm的离子束图案化MnGa薄膜。成功地制备了磁性图案化但拓扑平坦的MnGa薄膜，这表明MnGa薄膜在高密度平面位图案化介质中的实际应用。
(001) oriented L10phase MnGa films were grown on Cr (20 nm)/MgO(001) substrate, and Kr+ion irradiation on the MnGa films was carried out to control their magnetic properties. Highly ordered MnGa films were obtained at a relatively low temperature of 400°C, and the film exhibited the saturation magnetization Msof 450 emu/cc and uniaxial anisotropy Kuof ~7 × 106erg/cc before the irradiation. The Msand Kugradually decreased with the ion dose and became zero at the dose of 1 × 1014ions/cm2. While coercivity Hcof the MnGa showed a slight increase up to the dose of 1 × 1013ions/cm2and decreased abruptly with further increase of the ion dose. Ion beam patterned MnGa film with pitch sizes down to 80 nm was fabricated by the ion irradiation through the micro-fabricated resist masks. Magnetically patterned but topologically flat MnGa film was successfully fabricated, which suggests the practical application of the MnGa films to high-density planer bit patterned media.