SrSnO₃ Metal-Semiconductor Field-Effect Transistor With GHz Operation
SrSnO₃ Metal-Semiconductor Field-Effect Transistor With GHz Operation
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SrSnO™ 金属半导体场效应晶体管，工作频率 GHz
DOI：
10.1109/led.2020.3040417
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发表时间：
2021
影响因子：
4.9
通讯作者：
Koester, Steven J.
中科院分区：
文献类型：
--
作者：
Wen, Jiaxuan;Chaganti, V. R.;Truttmann, Tristan K.;Liu, Fengdeng;Jalan, Bharat;Koester, Steven J.
介绍了一种srsno3高频场效应晶体管（FET）。该器件结构由一个嵌入的肖特基栅极场效应管和一个重掺杂帽层组成。在栅极长度为0.5 μm、源漏间距为4 μm的器件上进行直流测量，最大漏极电流为53 mA/mm，最大跨导为43.2 mS/mm。射频（RF）特性显示，去嵌入后（之前）的截止频率fT为1.31 GHz (0.97 GHz)，最大振荡频率fmax为3.25 GHz（3.25）。这些结果代表了用于射频应用的钙钛矿材料的重要进展。
A SrSnO3high-frequency field-effect transistor (FET) is demonstrated. The device structure consists of a recessed Schottky-gate FET with a heavily doped cap layer. DC measurements on devices with 0.5-μm gate length and 4-μm source/drain spacing show a maximum drain current of 53 mA/mm and a maximum transconductance of 43.2 mS/mm. Radio frequency (RF) characterization reveals a cut-off frequency, fT, of 1.31 GHz (0.97 GHz) and a maximum oscillation frequency, fmax, of 3.25 (3.25) GHz, after (before) de-embedding. These results represent an important advancement in developing perovskite materials for RF applications.