Enhancement of photochemical response in bulk poly(methyl methacrylate) photopolymer dispersed organometallic compound

Enhancement of photochemical response in bulk poly(methyl methacrylate) photopolymer dispersed organometallic compound
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增强本体聚(甲基丙烯酸甲酯)光聚合物分散有机金属化合物的光化学响应

DOI:
10.1016/j.optcom.2012.08.002
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发表时间:
2012-11
影响因子:
2.4
通讯作者:
Sun, Xiudong4
Sun, Xiudong4
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Liu, Hongpeng1;Yu, Dan2;Yang, Li1;Wang, Weibo1;Zhang, Lianshun1;Wang, Hui3;Sun, Xiudong4

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从实验和理论上研究了甲基丙烯酸锌金属有机化合物和菲醌掺杂聚甲基丙烯酸甲酯光聚合物的光响应增强效应。在实验中,定量地给出了ZnMA化合物对光敏性的改善。通过对实验曲线的非线性拟合,确定了PQ分子的量子产率和引发速率等动力学参数。提出了考虑非局域效应的理论模型,解释了实际化学过程对光化学响应增强的贡献。最后对理论和实验结果进行了比较。ZnMA化合物的两个重要作用,作为一种催化剂,以加速光化学反应,并作为一种反应物,参与与PQ分子的光附着,定量证明。在优化的0.1wt%ZnMA掺杂的PQ-PMMA样品中,实验测得光栅形成时间常数为20.9s,光敏度为2.3×10 - 5cm ~ 2/J。该研究有助于揭示提高光敏性的物理机制,为提高全息存储材料的性能提供重要的理论依据。
The enhancement of photochemical response is investigated in Zinc methylacrylate organometallic compound and phenathrenequinone doped poly(methyl methacrylate) photopolymer experimentally and theoretically. In experiments, the improvement in photosensitivity due to ZnMA compound is presented quantitatively. The dynamics parameters, quantum yield and initiation rate of PQ molecules, are determined by nonlinear fitting the experimental curves. The theoretical model with nonlocal effect is proposed to explain the contribution of actual chemical process to the enhancement of photochemical response. The comparison of theoretical and experimental results is finally described. Two significant roles of ZnMA compound, as a catalyst to accelerate the photochemical reaction and as a reactant to participate in the photoattachment with PQ molecules, are demonstrated quantitatively. The time constant of grating formation 20.9s and the photosensitivity 2.3×10−5cm2/J are experimentally obtained in an optimized 0.1wt% ZnMA doped PQ-PMMA sample. This study contributes the physical mechanism for improvement of photosensitivity and provides significant theoretical foundation for advance the properties of materials in holographic memory.
DOI: 10.1364/oe.16.011253
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