Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures
Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures
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DOI：
10.1063/1.2894508
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发表时间：
2008-03-10
影响因子：
4
通讯作者：
Paiella, Roberto
中科院分区：
文献类型：
--
作者：
Bellotti, Enrico;Driscoll, Kristina;Paiella, Roberto
由于其巨大的光学声子能量，氮化半导体有望发展太赫兹量子级联激光器，相对于现有的GaAs器件，其高温性能显着提高。在这里，我们提出了一个严格的蒙特卡罗研究载流子动力学基于相同的设计方案，发射在2太赫兹，由GaN/AlGaN或GaAs/AlGaAs量子阱组成的两个结构。发现氮化器件的居群反转和增益系数表现出更弱的温度依赖性（超过3倍），并且即使没有低温冷却也足够大，可以用于激光作用。(C) 2008年美国物理研究所。
Due to their large optical phonon energies, nitride semiconductors are promising for the development of terahertz quantum cascade lasers with dramatically improved high-temperature performance relative to existing GaAs devices. Here, we present a rigorous Monte Carlo study of carrier dynamics in two structures based on the same design scheme for emission at 2 THz, consisting of GaN/AlGaN or GaAs/AlGaAs quantum wells. The population inversion and hence the gain coefficient of the nitride device are found to exhibit a much weaker (by a factor of over 3) temperature dependence and to remain large enough for laser action even without cryogenic cooling. (C) 2008 American Institute of Physics.