Effects of Annealing on the Mechanical Properties of Pentacene and Tris(8-hydroxyquinoline) Aluminum Films
Effects of Annealing on the Mechanical Properties of Pentacene and Tris(8-hydroxyquinoline) Aluminum Films
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DOI：
10.1080/15421406.2014.935916
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发表时间：
2014-08
影响因子：
0.7
通讯作者：
M. Kanari;M. Kunimoto;I. Ihara;T. Wakamatsu
中科院分区：
文献类型：
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作者：
M. Kanari;M. Kunimoto;I. Ihara;T. Wakamatsu
退火是改善有机半导体薄膜电性能的有效方法。采用纳米压痕法研究了并五苯和三（8-羟基喹啉）铝（Alq3）薄膜在140℃退火后的力学性能。原子力显微镜（AFM）观察表明，经包覆和退火后的五苯薄膜晶粒在160 ~ 258 nm范围内生长。退火处理使并五苯和Alq3薄膜的硬度分别比镀膜时降低了23%和36%，分别为0.643和0.523 GPa。晶粒的生长和硬度的降低主要是由于分子的热扩散和再结晶。
Annealing is reported as an effective process to improve electrical properties of organic semiconducting films. The mechanical properties of pentacene and tris(8-hydroxyquinoline) aluminum (Alq3) films annealed at 140°C were investigated in this study by nanoindentation testing. AFM observations of as-coated and annealed pentacene films indicate grain growth from 160 to 258 nm. The annealing process decreases pentacene and Alq3 film hardness by 23 and 36% from those of the as-coated films, 0.643 and 0.523 GPa. Grain growth and decreasing hardness are attributed to thermal diffusion and recrystallization of molecules.