Defect Structure of Heteroepitaxial SnO2 Thin Films Grown on TiO2 Substrates
Defect Structure of Heteroepitaxial SnO2 Thin Films Grown on TiO2 Substrates
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TiO2 衬底上异质外延 SnO2 薄膜的缺陷结构
DOI：
10.1143/jjap.40.6081
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发表时间：
2001
影响因子：
1.5
通讯作者：
M. Fujimoto
中科院分区：
文献类型：
--
作者：
H. Wakabayashi;Toshimasa Suzuki;Y. Iwazaki;M. Fujimoto
采用脉冲激光沉积技术在金红石（100）TiO2单晶衬底上生长了SnO2薄膜。采用透射电镜、反射高能电子衍射和原子力显微镜对缺陷的结构和表面形貌进行了研究。在200 nm厚的SnO2薄膜中，由错配引起的大双轴压应力几乎完全松弛，从而产生高密度界面错配位错和相关的平面缺陷。异质界面上的错配位错网络由两种类型的部分边缘位错组成，其Burgers向量分别为1/2<101>和1/2<110>，分别涉及薄膜中形成的{101}和{010}平面缺陷。较薄薄膜的表面形貌和横截面结构的演变表明，由于大的晶格失配，这些缺陷的引入发生在生长早期，并且受到点缺陷凝结的强烈影响。
Heteroepitaxal SnO2 thin films were grown on rutile (100) TiO2 single crystal substrates by pulsed laser deposition. The defect structure and surface morphology were investigated by transmission electron microscopy, reflection high-energy electron diffraction, and atomic force microscopy. The misfit-induced large biaxial compressive stress in the 200-nm-thick SnO2 thin film was almost fully relaxed to yield the high-density interfacial misfit dislocations and related planar defects. The misfit dislocation network on the hetero-interface consisted of two types of partial edge dislocations with Burgers vectors of 1/2<101> and 1/2<110>, which involved {101} and {010} planar defects formed in the film, respectively. The evolution of the surface morphology and cross-sectional structure for thinner films suggested that the introduction of such defects occurs at the early growth stage, due to large lattice misfit, and is strongly affected by point defect condensation.