Water-gated organic nanowire transistors
Water-gated organic nanowire transistors
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DOI：
10.1016/j.orgel.2013.01.024
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发表时间：
2013-04-01
影响因子：
3.2
通讯作者：
Grell, Martin
中科院分区：
文献类型：
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作者：
Al Naim, Abdullah;Hobson, Adam;Grell, Martin
我们在薄膜晶体管（TFT）架构中用水性双电层（EDL）门控p型和n型有机纳米线（NW）薄膜。对于p型纳米线，我们使用通过两种不同的路线生长的聚（3-己基噻吩）（P3 HT）纳米线。两者都可以用水选通，导致TFT的阈值低于相同选通条件下的常规浇铸P3 HT膜。然而，TFT漏极电流低于传统的P3 HT膜，这与“干”栅TFT的类似观察。对于n-型纳米线，我们已经生长的“纳米带”的聚（苯并咪唑并苯并菲咯啉）（BBL）的溶剂/非溶剂混合路线与后来的置换的溶剂，分散在非溶剂中。水门这样的电影最初未能得到一个可观察到的漏电流。然而，BBL纳米带可以用非质子溶剂乙腈门控，得到高的n型漏电流，其通过添加盐进一步增加。值得注意的是，在首先用乙腈门控BBL NW膜之后，它们然后可以用水门控，从而产生非常高的漏电流。这种行为在几分钟的时间尺度上是短暂的。我们认为这一观察结果是由保留在纳米带表面上的薄保护性乙腈膜引起的。(c)2013爱思唯尔有限公司版权所有。
We gated both p-type, and n-type, organic nanowire (NW) films with an aqueous electric double layer (EDL) in thin-film transistor (TFT) architectures. For p-type NWs, we used poly(3-hexylthiophene) (P3HT) NWs grown via two different routes. Both can be gated with water, resulting in TFTs with threshold lower than for conventionally cast P3HT films under the same gating conditions. However, TFT drain currents are lower for NWs than for conventional P3HT films, which agrees with similar observations for 'dry' gated TFTs. For n-type NWs, we have grown 'nanobelts' of poly(benzimidazobenzophenanthroline) (BBL) by a solvent/non-solvent mixing route with later displacement of the solvent, and dispersion in a non-solvent. Water-gating such films initially failed to give an observable drain current. However, BBL nanobelts can be gated with the aprotic solvent acetonitrile, giving high n-type drain currents, which are further increased by adding salt. Remarkably, after first gating BBL NW films with acetonitrile, they can then be gated by water, giving very high drain currents. This behaviour is transient on a timescale of minutes. We believe this observation is caused by a thin protective acetonitrile film remaining on the nanobelt surface. (c) 2013 Elsevier B.V. All rights reserved.