Observation of a one-dimensional spin-orbit gap in a quantum wire
Observation of a one-dimensional spin-orbit gap in a quantum wire
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DOI：
10.1038/nphys1626
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发表时间：
2010-05-01
期刊：
影响因子：
19.6
通讯作者：
de Picciotto, R.
中科院分区：
文献类型：
--
作者：
Quay, C. H. L.;Hughes, T. L.;de Picciotto, R.
理解磁性分层结构中的自旋流导致硬盘驱动器中的数据存储密度在过去十年中增加了两个数量级以上（1）。在这一显著的成功之后，“自旋电子学”或基于自旋的电子学（1-3）的领域正在超越基于局部自旋极化的效应，并且正在转向自旋轨道相互作用（SOI）效应，其有望用于自旋电流的产生、检测和操纵，从而允许在设备内相干传输信息（1，2）。尽管SOI诱导的自旋输运效应已经在二维和三维样品中观察到，但这些效应是微妙和难以捉摸的，通常只能在电输运中间接检测到，或者用更复杂的技术检测到（4-9）。在这里，我们提出了在一维样品中预测的“自旋-轨道间隙”的第一个观察结果，其中构成自旋电流的反向传播自旋伴随着系统（10，11）的容易测量的线性电导中的清晰信号。我们首先介绍了一类现象，我们称之为“一维自旋轨道间隙”使用一个简单的例子改编自参考文献10，然后详细描述我们的实验，最后提出一个更精细的模型，捕捉我们的数据中看到的大部分功能。
Understanding the flow of spins in magnetic layered structures has resulted in an increase in data storage density in hard drives over the past decade of more than two orders of magnitude(1). Following this remarkable success, the field of 'spintronics' or spin-based electronics(1-3) is moving beyond effects based on local spin polarization and is turning towards spin-orbit interaction (SOI) effects, which hold promise for the production, detection and manipulation of spin currents, allowing coherent transmission of information within a device(1,2). Although SOI-induced spin transport effects have been observed in two- and three-dimensional samples, these have been subtle and elusive, often detected only indirectly in electrical transport or else with more sophisticated techniques(4-9). Here we present the first observation of a predicted 'spin-orbit gap' in a one-dimensional sample, where counter-propagating spins, constituting a spin current, are accompanied by a clear signal in the easily measured linear conductance of the system(10,11). We first introduce the class of phenomena we dub 'the one-dimensional spin-orbit gap' using a simple example adapted from ref. 10, then describe our experiment in detail and finally present a more elaborate model that captures most of the features seen in our data.