Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs
Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs
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DOI：
10.1109/55.863106
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发表时间：
2000-09
影响因子：
4.9
通讯作者：
S. Oh;D. Monroe;J. Hergenrother
中科院分区：
文献类型：
--
作者：
S. Oh;D. Monroe;J. Hergenrother
全耗尽型双栅极 (DG) 和圆柱形环绕栅极 (Cyl) MOSFET 中的短沟道效应受栅极限制的静电势控制，因此也受器件尺寸的影响。简单但强大的消逝模式分析表明，源极和漏极扰动沟道电位的长度 /spl lambda/ 在双栅极情况下是有效器件厚度的 1//spl pi/，在圆柱形情况下是有效直径的 1/4.810，与 PADRE 器件模拟非常一致。因此，对于等效的硅和栅极氧化物厚度，倏逝模式分析表明，Cyl-MOSFET 的沟道长度可以比 DG-MOSFET 短 35%。
Short-channel effects in fully-depleted double-gate (DG) and cylindrical, surrounding-gate (Cyl) MOSFETs are governed by the electrostatic potential as confined by the gates, and thus by the device dimensions. The simple but powerful evanescent-mode analysis shows that the length /spl lambda/, over which the source and drain perturb the channel potential, is 1//spl pi/ of the effective device thickness in the double-gate case, and 1/4.810 of the effective diameter in the cylindrical case, in excellent agreement with PADRE device simulations. Thus for equivalent silicon and gate oxide thicknesses, evanescent-mode analysis indicates that Cyl-MOSFETs can be scaled to 35% shorter channel lengths than DG-MOSFETs.