Performance analysis of field exposed single crystalline silicon modules
Performance analysis of field exposed single crystalline silicon modules
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现场暴露的单晶硅组件性能分析
DOI：
10.1016/j.solmat.2010.03.035
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发表时间：
2010
影响因子：
6.9
通讯作者：
Bibek Bandopadhyay
中科院分区：
文献类型：
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作者：
O. S. Sastry;S. Saurabh;S. Shil;P. Pant;R. Kumar;Arun Kumar;Bibek Bandopadhyay
本文介绍了在相同的现场条件下，单晶硅光伏组件的11个光伏组件制造商的现场性能退化的结果。这些模块以固定倾斜和手动跟踪模式安装。使用CR 23 X数据记录器监测数据，并使用SPI 240 A Sun模拟器绘制I-V曲线。分析的性能参数是Voc，Isc，Pmax，Imp，Vmp和填充因子，作为场曝光时间的函数。定性研究了物理可见缺陷，如伊娃着色、电池分层、太阳能电池板栅腐蚀、连接在接线盒中的端条腐蚀、旁路二极管失效、接线盒脱落、Tedlar片撕裂，现场暴露对性能参数的影响表明，如果模块要在印度的实际现场条件下运行20年，则需要进行审查和修订。
This paper presents results on the field performance degradation of mono-crystalline silicon PV modules from 11PV module manufacturers under identical field conditions. The modules were installed in both fixed tilt and manual tracking modes. The data were monitored using a CR23X Data logger and I–V curves were taken using SPI 240A Sun simulator. The performance parameters analyzed are Voc, Isc, Pmax, Imp, Vmpand the fill factor, as a function of time of field exposure. Qualitative studies are made on physically visible defects such as EVA coloration, cell de-laminations, corrosion of solar cell grid, corrosion of end strip connected in the terminal box, failure of by-pass diode, detachment of the terminal box, tearing of tedlar sheet, etc. The effect of field exposure on the performance parameters indicates that the qualification standard (s) needs to be reviewed and revised if the modules are to perform for ∼20 years under actual field conditions in India.