Analytical model for the surface field distribution of SOI RESURF devices
Analytical model for the surface field distribution of SOI RESURF devices
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DOI：
10.1109/16.678582
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发表时间：
1998-06-01
影响因子：
3.1
通讯作者：
Han, SY
中科院分区：
文献类型：
--
作者：
Chung, SK;Han, SY
提出了一种确定沿绝缘体上硅（SOI）表面电场降低（RESURF）器件表面电场分布的解析模型，该模型给出了表面电场随掺杂浓度、栅和漏场板长度、栅和埋氧层厚度以及外加电压的近似而显式的表达式.数值模拟支持分析结果。
An analytical model is presented to determine the electric field distribution along the semiconductor surface of silicon-on-insulator (SOI) REduced SURface Field (RESURF) devices, which allows an approximate but explicit expression for the surface field in terms of the doping concentration, the lengths of the gate and drain field plate, the thicknesses of the gate and buried oxide, and the applied voltages. Numerical simulations support the analytical results.