Highly spectrum-selective near-band-edge ultraviolet photodiode based on indium oxide with dipole-forbidden bandgap transition
Highly spectrum-selective near-band-edge ultraviolet photodiode based on indium oxide with dipole-forbidden bandgap transition
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基于具有偶极禁止带隙跃迁的氧化铟的高光谱选择性近带边紫外光电二极管
DOI：
10.1016/j.ceramint.2016.01.206
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发表时间：
2016
影响因子：
5.2
通讯作者：
Sui Yingrui
中科院分区：
文献类型：
--
作者：
Huang Yanan;Li Yongfeng;Deng Rui;Yao Bin;Ding Zhanhui;Zhang Ligong;Zhao Haifeng;Zhang Zhenzhong;Liu Lei;Sui Yingrui
报道了一种具有偶极禁带跃迁的高光谱选择性In 2 O3紫外光电二极管。在In 2 O3纳米晶嵌入非晶In 2 O3基体的混合薄膜中观察到了近带边的紫外发射和吸收，表明体In 2 O3的偶极-禁戒规则被打破。在p-GaN/蓝宝石衬底上沉积In 2 O3混合薄膜，形成In 2 O3/p-GaN异质结光电二极管。该光电二极管在电流-电压测量中表现出明显的整流特性，在背照条件下，在近带边区域表现出窄带紫外光响应。基于第一性原理的电子结构计算表明，In 2 O3纳米晶的表面态是导致偶极禁戒跃迁规则被打破的原因.我们的研究结果表明，定制的In 2 O3纳米晶结构是一个有效的途径，以实现新的光学性能，并将这些性能应用于紫外光电领域。
We reported a highly spectrum-selective ultraviolet photodiode based on In2O3with dipole-forbidden bandgap transition. The near-band-edge ultraviolet emission and absorption were observed in the hybrid In2O3films with the In2O3nanocrystals embedded into the amorphous In2O3matrix, indicating that the dipole-forbidden rule of bulk In2O3is broken. The hybrid In2O3film was deposited on the p-GaN/sapphire wafer to form an In2O3/p-GaN heterojunction photodiode. The photodiode showed an obvious rectifying behavior in a current–voltage measurement and a narrow-band ultraviolet photoresponse at the near-band-edge region under back-illumination conditions. Electronic structure calculations based on the first-principles method demonstrate that the breaking of dipole-forbidden transition rule is derived from the surface states of In2O3nanocrystals. Our results suggest that tailoring the In2O3nanocrystalline structure is an effective route to achieving novel optical properties and applying these properties to the ultraviolet optoelectronic field.