Two-phase behavior in strained thin films of hole-doped manganites
Two-phase behavior in strained thin films of hole-doped manganites
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DOI：
10.1103/physrevb.61.9665
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发表时间：
1999-10
影响因子：
3.7
通讯作者：
A. Biswas;M. Rajeswari;R. Srivastava;Yuelin Li;T. Venkatesan;R. L. Greene;A. Millis
中科院分区：
文献类型：
--
作者：
A. Biswas;M. Rajeswari;R. Srivastava;Yuelin Li;T. Venkatesan;R. L. Greene;A. Millis
本文研究了双轴应变对锰酸盐薄膜电性能和磁性能的影响。我们观察到，在双轴压缩应变下生长的锰酸盐薄膜呈现岛状生长形态，导致应变分布不均匀。这些薄膜的输运和磁性表明了两种不同相的共存，一种是金属铁磁体，另一种是绝缘反铁磁体。我们认为高应变区是绝缘的，而低应变区是金属的。在这种非均匀应变样品中，我们观察到大的磁电阻和场致绝缘体到金属的转变。
We present a study of the effect of biaxial strain on the electrical and magnetic properties of thin films of manganites. We observe that manganite films grown under biaxial compressive strain exhibit island growth morphology which leads to a nonuniform distribution of the strain. Transport and magnetic properties of these films suggest the coexistence of two different phases, a metallic ferromagnet and an insulating antiferromagnet. We suggest that the high strain regions are insulating while the low strain regions are metallic. In such nonuniformly strained samples, we observe a large magnetoresistance and a field-induced insulator-to-metal transition.