Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires
Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires
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DOI：
10.1021/nl052189o
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发表时间：
2006-04-01
期刊：
影响因子：
10.8
通讯作者：
Suvorova, AA
中科院分区：
文献类型：
--
作者：
Kim, Y;Joyce, HJ;Suvorova, AA
采用金属有机化学气相沉积法在（111）B GaAs表面合成了三元InGaAs纳米线。采用金胶体纳米颗粒催化纳米线生长。我们观察到纳米线密度对纳米线高度、锥度和基形有很强的影响，特别是高含铟的纳米线。这种依赖性是由于In和Ga两种反应物质在（111）B表面上的扩散长度差异很大，其中In是更灵活的物质。能量色散x射线光谱分析和高分辨率电子显微镜对单个InGaAs纳米线的研究表明，沿纳米线的In/Ga成分发生了很大的变化，支持了目前的扩散模型。随着纳米线密度的降低，光致发光光谱呈现红移，这是由于在分布更稀疏的InGaAs纳米线中掺杂了更多的In。
We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.