Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter
Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter
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DOI：
10.1109/ecce.2013.6647171
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发表时间：
2013-10
期刊：
影响因子：
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通讯作者：
Weimin Zhang;Zhuxian Xu;Zheyu Zhang;Fred Wang;L. Tolbert;B. Blalock
中科院分区：
文献类型：
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作者：
Weimin Zhang;Zhuxian Xu;Zheyu Zhang;Fred Wang;L. Tolbert;B. Blalock
近年来，硅功率MOSFET的性能已经接近极限，氮化镓（GaN）HEMT也逐渐成熟。本文评估了600 V共源共栅GaN HEMT的性能，并将其与LLC谐振转换器中最先进的Si CoolMOS进行了比较。首先，描述了600 V共源共栅GaN HEMT在不同温度下的静态特性.利用双脉冲测试仪测试了开关特性，为LLC谐振变换器的设计提供关断损耗参考。其次，将采用600 V共源共栅GaN HEMT的400 V-12 V/300 W/1 MHz全GaN基转换器与采用600 V Si CoolMOS的Si基转换器进行比较。在LLC谐振变换器的设计和损耗分析中，器件输出电容是一个关键因素。设计结果表明，全GaN基转换器的GaN器件总损耗较Si器件总损耗可提高42%。最后，对400 V-12 V/300 W/1 MHz硅基和GaN基LLC谐振变换器原型进行了测试，并与波形和效率曲线进行了比较。
In recent years, Si power MOSFET is approaching its performance limits, and Gallium Nitride (GaN) HEMT is getting mature. This paper evaluates the 600 V cascode GaN HEMT performance, and compares it with the state-of-the-art Si CoolMOS in LLC resonant converter. First, the static characterization of 600 V cascode GaN HEMT is described in different temperatures. The switching performance is tested by a double pulse tester to provide the turn-off loss reference to the design of LLC resonant converter. Second, a 400 V-12 V/300 W/1 MHz all-GaN-based converter with the 600 V cascode GaN HEMT is compared with a Si-based converter with the 600 V Si CoolMOS. The device output capacitance is a key factor in the design and loss analysis of LLC resonant converter. The design results show that the total GaN device loss of the all-GaN-based converter can be improved by 42% compared with the total Si device loss. Finally, both 400 V-12 V/300 W/1 MHz Si-based and GaN-based LLC resonant converter prototypes are tested and compared with waveforms and efficiency curves.