Highly Anisotropic P3HT Film Fabricated via Epitaxy on an Oriented Polyethylene Film and Solvent Vapor Treatment

Highly Anisotropic P3HT Film Fabricated via Epitaxy on an Oriented Polyethylene Film and Solvent Vapor Treatment
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通过在取向聚乙烯薄膜上外延和溶剂蒸气处理制备的高度各向异性 P3HT 薄膜

DOI:
10.1021/acs.langmuir.9b00402
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发表时间:
2019-06-18
期刊:
影响因子:
3.9
通讯作者:
Sun, Xiaoli
Sun, Xiaoli
中科院分区:
化学2区
文献类型:
--
作者:
Li, Jiali;Xue, Meiling;Sun, Xiaoli

文献摘要

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相似文献

为了提高聚3-己基噻吩(P3 HT)在高取向聚乙烯(PE)衬底上的外延结晶能力,采用可控溶剂气相处理(CSVT)。各向异性结构和相关的光学性质不仅取决于用于制备膜的溶剂,而且还取决于随后的溶剂蒸气处理压力和时间。高度取向的PE膜促进P3 HT的“侧上”链取向,其c轴平行于PE膜的拉伸方向。P3 HT薄膜的紫外-可见光谱反射的二色性比(DR)可高达7.1,远大于热退火处理的值。此外,表示有效共轭长度和分子有序度的激发带宽W显示出显著的各向异性特征。用于溶液处理的具有高沸点的溶剂更有利于诱导各向异性多尺度结构。特别地,取向结构导致明显的各向异性载流子迁移率。CSVT后P3 HT的载流子迁移率沿PE分子链方向沿着是垂直于PE链方向测量的7.5倍。这对制备性能优良的共轭聚合物半导体各向异性薄膜具有重要意义。
To improve the epitaxial crystallization ability of poly(3-hexylthiophene) (P3HT) on a highly oriented polyethylene (PE) substrate, controlled solvent vapor treatment (CSVT) is employed. The anisotropic structures and related optical properties depend not only on the solvent used to prepare the film but also on the subsequent solvent vapor treatment pressure and time. A highly oriented PE film facilitates the "side-on" chain orientation of P3HT with its c axis parallel to the drawing direction of the PE film. The dichroic ratio (DR) of the P3HT film reflected by UV-vis spectra can reach as high as 7.1, which is much larger than the value treated by thermal annealing. Moreover, the excitation bandwidth W, indicating the effective conjugation length and molecular order, shows significant anisotropic features. Solvent used for solution processing with a high boiling point is more favorable for inducing anisotropic multiscale structures. In particular, the oriented structures lead to obvious anisotropic carrier mobility. The carrier mobility of P3HT after CSVT along the PE molecular chain direction is 7.5 times higher than that measured perpendicular to the PE chain direction. This is of great importance in fabricating anisotropic thin films of conjugated polymeric semiconductors with enhanced performance.