Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems
Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems
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使用硅烷或六甲基二硅烷/丙烷前驱体系统生长的 <0001> 4H-SiC 层的比较研究
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发表时间：
2004
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通讯作者：
S. Rushworth
中科院分区：
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作者：
C. Sartel;Carole Balloud;V. Souliere;S. Juillaguet;J. Dazord;Y. Monteil;J. Camassel;S. Rushworth
我们比较了两个系列的4 H-SiC层生长与硅烷/丙烷或六甲基二硅烷/丙烷前体系统。在这两种情况下，生长速率随着前体流动而增加。然而，它饱和，然后在高温下趋于减少。生长条件（C/Si比，生长速率，生长温度），得到良好的表面形貌的范围进行了研究。两种系统的工作窗口相同，显微拉曼和LTPL光谱都证实了高质量4 H-SiC多型体的形成。
We compare two series of 4H-SiC layers grown with either silane/propane or hexamethyldisilane/propane precursor systems. In both cases, the growth rate increases with precursor flow. However it saturates and, then, tend to decrease at high temperature. The range of growth conditions (C/Si ratio, growth rate, growth temperature) which give good surface morphology has been studied. The operating windows are identical for the two systems .In both cases, micro-Raman and LTPL spectroscopy confirm the formation of high quality 4H-SiC polytype.