220 GHz Wideband Integrated Receiver Front End Based on Planar Schottky Diodes

220 GHz Wideband Integrated Receiver Front End Based on Planar Schottky Diodes
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基于平面肖特基二极管的 220 GHz 宽带集成接收器前端

DOI:
10.1002/mop.32300
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发表时间:
2020
影响因子:
1.5
通讯作者:
XiaoDong Chen
XiaoDong Chen
中科院分区:
工程技术4区
文献类型:
--
作者:
YiLin Yang;Bo Zhang;XiangYang Zhao;Yong Fan;XiaoDong Chen

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在这篇文章中,提出了一个220 GHz的宽带接收机前端,具有一个220 GHz的次谐波混频器和一个110 GHz的宽带三倍频集成在一个单一的块。首次采用合适的平面肖特基二极管分别研制了220 GHz次谐波混频器和110 GHz三倍频器。仿真和实验结果表明,独立混频器和三倍频器的直接组合会导致前端性能的恶化,特别是对于宽带接收机。这表明在宽带亚毫米波接收机中级联电路之间建立匹配网络的必要性。为了提高接收机前端的整体性能并减小其尺寸,采用负载牵引技术优化了分谐波混频器和三倍频器的组合,并在一个模块中实现。测量结果显示,集成接收机前端的单边带(SSB)转换损耗在185至250 GHz范围内为7.5 - 11 dB,而双边带(DSB)噪声温度在该频率范围内为750 - 1600 K。集成前端的体积只有独立模块组合的一半,性能更好。仿真结果与实测结果吻合较好,表明该集成优化技术可以应用于未来紧凑型太赫兹系统的实现。
In this article, a 220 GHz wideband receiver front end is proposed, featuring a 220 GHz subharmonic mixer and a 110 GHz wideband tripler integrated in one single block. The 220 GHz subharmonic mixer and 110 GHz tripler are firstly developed separately with proper planar Schottky diodes. According to the simulated and experimental results, the direct combination of independent mixer and tripler will lead to deterioration of the front end's performances, especially for wideband receivers. This indicates the necessity of building matching network between the cascade circuits in wideband submillimeter receivers. To improve the integral performances of the receiver front end and reduce its size, the combination of the subharmonic mixer and the tripler was optimized with load‐pull techniques and realized in one block. Measured results reveal that the single sideband (SSB) conversion loss of the integrated receiver front end is 7.5‐11 dB from 185 to 250 GHz, while the double sideband (DSB) noise temperature is 750‐1600 K within this frequency range. The integrated front end features half size of the combination of independent modules and better performances. Good agreement between the simulated and measured results shows that the integration and optimization techniques can be applied to realize compact terahertz systems in the future.