Performance Enhancement of Blue InGaN Light-Emitting Diodes With a GaN–AlGaN–GaN Last Barrier and Without an AlGaN Electron Blocking Layer
Performance Enhancement of Blue InGaN Light-Emitting Diodes With a GaN–AlGaN–GaN Last Barrier and Without an AlGaN Electron Blocking Layer
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DOI：
10.1109/jqe.2014.2305451
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发表时间：
2014-02
影响因子：
2.5
通讯作者：
Liwen Cheng;Shudong Wu
中科院分区：
文献类型：
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作者：
Liwen Cheng;Shudong Wu
对GaN-AlGaN-GaN最后势垒（GAGLB）和无AlGaN电子阻挡层（EBL）的InGaN蓝光发光二极管进行了数值模拟。当用GAGLB代替传统的最后一个GaN势垒并去除最常用的AlGaN EBL时，正向电压从3.39 V降低到2.98 V，效率下降从30.1%改善到14.2%。模拟结果表明，这些改善可以归因于有效的势垒高度的电子限制和空穴注入效率的提高，由于隧道效应的GAGLB。
Blue InGaN light-emitting diodes with a GaN-AlGaN-GaN last barrier (GAGLB) and without an AlGaN electron blocking layer (EBL) are investigated numerically. When the conventional last GaN barrier is replaced by a GAGLB and the most commonly used AlGaN EBL is removed, the forward voltage is reduced from 3.39 to 2.98 V, and the efficiency droop is improved from 30.1% to 14.2%. Simulation results indicate that these improvements can be attributed to the effective barrier height increase for electron confinement and to hole injection efficiency enhancement due to tunneling effect in the GAGLB.