Layered Semiconducting 2D Materials for Future Transistor Applications
Layered Semiconducting 2D Materials for Future Transistor Applications
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DOI：
10.1002/sstr.202000103
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发表时间：
2021-01
期刊：
影响因子：
15.9
通讯作者：
S. Su;Chih-Piao Chuu;Ming-Yang Li;Chao-Ching Cheng;H. P. Wong;Lain‐Jong Li
中科院分区：
文献类型：
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作者：
S. Su;Chih-Piao Chuu;Ming-Yang Li;Chao-Ching Cheng;H. P. Wong;Lain‐Jong Li
横向尺寸上晶体管尺寸的缩小必须伴随着沟道厚度的相应减小，以确保足够的栅极控制来关闭晶体管。然而，由于更明显的表面散射，3D体半导体的载流子迁移率随着体层厚度的减薄而迅速下降。具有完美表面结构的二维层状材料提供了一个独特的机会，因为它们自然具有原子薄而光滑的层，同时保持高载流子迁移率。为了从持续的比例调整中获益，比例调整后的2D晶体管的性能需要优于目前的硅技术。关于潜在的二维材料的材料性质的讨论已经有相当多的综述。人们认为，需要基于行业视角的严格分析。文中对沟道材料的选择进行了分析，并对所选择的四种2D半导体进行了论证，它们可能满足未来晶体管的需求，包括WS2、SnSe、PtSe2和InSe。文中还讨论了每种材料面临的挑战和相关研究进展。
Down‐scaling of transistor size in the lateral dimensions must be accompanied by a corresponding reduction in the channel thickness to ensure sufficient gate control to turn off the transistor. However, the carrier mobility of 3D bulk semiconductors degrades rapidly as the body thickness thins down due to more pronounced surface scattering. Two‐dimensional‐layered materials with perfect surface structures present a unique opportunity as they naturally have atomically thin and smooth layers while maintaining high carrier mobility. To benefit from continuous scaling, the performance of the scaled 2D transistors needs to outperform Si technology nowadays. There are already quite a few reviews discussing on the material property of potential 2D materials. It is believed that rigorous analysis based on industrial perspectives is needed. Herein, an analysis on channel material selection is presented and arguments on the four selected 2D semiconductors are provided, which can possibly meet the needs of future transistors, including WS2, SnSe, PtSe2, and InSe. The challenges and recent related research progresses for each material are also discussed.