Large-Area Electrodeposition of Few-Layer MoS2 on Graphene for 2D Material Heterostructures.
Large-Area Electrodeposition of Few-Layer MoS2 on Graphene for 2D Material Heterostructures.
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DOI：
10.1021/acsami.0c14777
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发表时间：
2020-10
影响因子：
9.5
通讯作者：
Yasir J Noori;Shibin Thomas;S. Ramadan;Danielle E. Smith;V. Greenacre;N. Abdelazim;Yisong Han;
中科院分区：
文献类型：
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作者：
Yasir J Noori;Shibin Thomas;S. Ramadan;Danielle E. Smith;V. Greenacre;N. Abdelazim;Yisong Han;
由二维过渡金属二卤化物和石墨烯等其他材料组成的异质结构有很强的潜力成为许多电子和光电子应用的基本构件。这种异质结构的集成和可扩展制造对于释放这些材料在新技术中的潜力至关重要。首次用非水电沉积的方法在石墨烯上生长了几层MoS_2薄膜。通过扫描和透射电子显微镜、原子力显微镜、拉曼光谱、能量色散和波长色散X射线能谱、X射线光电子能谱等手段，我们证明了这种沉积方法可以在石墨烯上制备出高质量和均匀的大面积MoS_2薄膜。我们通过测量通过薄膜的光生电流来揭示这些异质结构的电势。这些结果为发展电沉积方法大规模生长由不同的2D材料组成的异质结构提供了基础。
Heterostructures involving two-dimensional (2D) transition metal dichalcogenides and other materials such as graphene have a strong potential to be the fundamental building block of many electronic and optoelectronic applications. The integration and scalable fabrication of such heterostructures are of the essence in unleashing the potential of these materials in new technologies. For the first time, we demonstrate the growth of few-layer MoS2 films on graphene via nonaqueous electrodeposition. Through methods such as scanning and transmission electron microscopy, atomic force microscopy, Raman spectroscopy, energy- and wavelength-dispersive X-ray spectroscopies, and X-ray photoelectron spectroscopy, we show that this deposition method can produce large-area MoS2 films with high quality and uniformity over graphene. We reveal the potential of these heterostructures by measuring the photoinduced current through the film. These results pave the way toward developing the electrodeposition method for the large-scale growth of heterostructures consisting of varying 2D materials for many applications.